An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling

An improved deep submicrometer (0.25 mum) MOSFET radio-frequency (RF) large signal model that incorporates a new breakdown current model and drain-to- substrate nonlinear coupling was developed and investigated using various e xperiments. An accurate breakdown model is required for deep submicrometer MOSFETs due to their relatively low breakdown voltage. For the first time, this RF nonlinear model incorporates the breakdown voltage turnover trend i nto a continuously differentiable channel current model and a new nonlinear coupling circuit between the drain and the lossy substrate. The robustness of the model is verified with measured pulsed I-V, S-parameters, power cha racteristics, harmonic distortion, and intermodulation distortion levels at different input and output termination conditions, operating biases, and f requencies.