Scalable GaInP/GaAs HBT large-signal model

A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented in this paper. It allows exact modeling of all transistor par ameters from single-finger elementary cells to multifinger power devices. T he scaling rules are given in detail. The model includes a new collector de scription, which accounts for modulation of base-collector capacitance C-jc , as well as for base and collector transit times due to temperature effect s and high-current injection. The model is verified by comparison with meas urements of GaInP/GaAs HBTs.