W-band HEMT-oscillator MMICs using subharmonic injection locking

The efficient stabilization of high electron mobility transistor (HEMT) osc illator monolithic microwave integrated circuits (MMICs) for W-band applica tions, using a new approach of high-order subharmonic injection locking, is presented, Transmission- and reflection-type injection locking techniques are applied to stabilize 94-GHz oscillators based on GaAs pseudomorphic-HEM T technology. A voltage-controlled oscillator MMIC was developed, consistin g of the oscillator circuit and an integrated harmonic generator, that can be stabilized by injection power levels of -45 dBm at 94 GHz using reflecti on-type injection locking, allowing reference frequencies as low as the fif teenth to twenty-first subharmonic as the input for the harmonic generator. Additionally, an injection-locked phase-locked loop (PLL) was developed, w hich enhances the locking range from 30 MHz to 1 GHz, using the twenty-firs t subharmonic as a reference signal. The combination of simple synchronizat ion to a low-frequency reference signal and the control of the synchronizat ion in the injection-locked PLL allows the generation of stable and low-noi se millimeter-wave signals with a fully integrated MMIC source.