Electroluminescence in Si/SiO2 layer structures

Electroluminescence spectra have been studied on samples consisting of a si ngle SiO2 or poly Si layer or SiO2/Si layer pair grown either on silicon or metal substrates. The samples were designed for determining the conditions and the location where electroluminescence originates in SiO2/Si structure s. An intermediate gold layer was used to isolate the active layers from th e silicon substrate. The results indicate that significant electroluminesce nce emission can be observed only in those samples that have SiO2 p-type cr ystalline Si interface. The most promising explanation of this phenomenon i s that there are defect levels in the thin silicon oxide layer near the int erface. (C) 2001 American Institute of Physics.