Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells

Citation
K. Kotsovos et K. Misiakos, Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells, J APPL PHYS, 89(4), 2001, pp. 2491-2496
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
4
Year of publication
2001
Pages
2491 - 2496
Database
ISI
SICI code
0021-8979(20010215)89:4<2491:TSOCTE>2.0.ZU;2-B
Abstract
A method is proposed for a thorough analysis of rear point contact solar ce ll structures. The method is based on the numerical solution through Fast f ourier transform of the minority and majority carrier transport equations i n three dimensions in the base of the cell. Their illuminated current-volta ge characteristics are simulated and the series resistance of the cell is c alculated. Results are presented which show the influence of the rear conta ct size and the majority transport in the base to the solar cell performanc e. (C) 2001 American Institute of Physics.