Irradiation effect of low energy nitrogen-ion beam during pulsed laser deposition process on the structural and bonding properties of carbon-nitride thin films

Carbon-nitride thin films were deposited by pulsed laser ablation of graphi te with assistance of low energy nitrogen-ion-beam irradiation. The nitroge n to carbon (N/C) atomic ratio, bonding state, microstructure, surface morp hology, and electrical property of the deposited carbon-nitride films were characterized by x-ray photoelectron spectroscopy, Fourier transform infrar ed spectroscopy, micro-Raman spectroscopy, x-ray diffraction (XRD), atomic force microscopy, and four-probe resistance. The irradiation effect of low energy nitrogen-ion beam on the synthesis of carbon-nitride films was inves tigated. The N/C atomic ratio of the carbon-nitride films reached the maxim um at the ion energy of similar to 200 eV. The energy of similar to 200 eV was proposed to promote the desired sp(3)-hybridized carbon and the C3N4 ph ase. Electrical resistivity of the deposited films was also influenced by t he low energy nitrogen-ion-beam irradiation. However, the low energy irradi ation had little effect on the surface morphology of the films. XRD results revealed the coexistence of the alpha- and beta -C3N4 phases in the deposi ted thin films. (C) 2001 American Institute of Physics.