Modeling of gate-induced drain leakage current in n-type metal-oxide-semiconductor field effect transistor

Gate-induced drain leakage current (I-gidl) in n-type metal-oxide-semicondu ctor field effect transistor is distinguished from other leakage processes by a weak dependence on temperature and a strong variation with transverse electric field and junction doping. The source of this current is the band- to-band tunneling effect in the gate-drain overlap region. We propose a mod el of I-gidl current, which takes into account the spatial distribution of the transverse electric field and the doping profile in the drain region. T his model also takes into account the donor or acceptor type of defects loc ated in the oxide above the gate-drain overlap region. These defects can be simulated by a Gaussian distribution. (C) 2001 American Institute of Physi cs.