Wk. Choi et al., Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films, J APPL PHYS, 89(3), 2001, pp. 1942-1947
An oxidation study of plasma-enhanced chemical vapor deposited (PECVD) and
rf sputtered hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films was
carried out using the infrared (IR) and electron spin resonance (ESR) tech
niques. a-Si1-xCx:H films with x= 0.3, 0.5, and 0.8 were prepared with the
PECVD method and significant oxide growth can only be obtained in a-Si0.2C0
.8:H film. IR results showed that Si-CH3 bonds provide the necessary porous
structure for oxide growth. The oxide quality was found to be poor when co
mpared to oxide obtained from pure silicon. Annealing in nitrogen enhances
the Porosity of the PECVD films and results in faster oxide growth. For spu
ttered films, oxide growth can only be observed in film containing Si-CH3 b
onds. We are not able to separate the contributions of the Si-H, Si-C, Si-C
H3, and the Si dangling bonds to the oxide growth for the PECVD and rf sput
tered films. (C) 2001 American Institute of Physics.