AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

Authors
Bermudez, VM Wu, CI Kahn, A
Citation
Vm. Bermudez et al., AlN films on GaN: Sources of error in the photoemission measurement of electron affinity, J APPL PHYS, 89(3), 2001, pp. 1991-1991
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
3
Year of publication
2001
Pages
1991 - 1991
Database
ISI
SICI code
0021-8979(20010201)89:3<1991:AFOGSO>2.0.ZU;2-#
Abstract
This communication corrects an error in the value previously reported by on e of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 e V as the "true" EA of wurtzite AlN. (C) 2001 American Institute of Physics.