In situ etching at InGaAs/GaAs quantum well interfaces

In this paper, we report on the use of in situ AsCl3 etching to suppress th e indium-enriched layer formed at the InGaAs quantum well (QW) surfaces whi ch is well known to result from In segregation mechanism. The effects of su ch an etching step performed at the GaAs on InGaAs QW interface have been a ssessed by secondary ion mass spectrometry (SIMS) and low-temperature photo luminescence spectroscopy (PL). Both SIMS and PL data clearly show that the re is no degradation of the material quality. Moreover, these data are well accounted for by considering that the etching step has eliminated the In s egregated layer at the InGaAs surface. (C) 2001 Elsevier Science B.V. All r ights reserved.