Effect of rapid thermal annealing an the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy

Citation
Hf. Liu et al., Effect of rapid thermal annealing an the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy, J CRYST GR, 222(3), 2001, pp. 503-506
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
222
Issue
3
Year of publication
2001
Pages
503 - 506
Database
ISI
SICI code
0022-0248(200101)222:3<503:EORTAA>2.0.ZU;2-F
Abstract
Rapid thermal annealing (RTA) of the cubic GaN (c-GaN) film grown on GaAs ( 0 0 1) substrate by molecular beam epitaxy shows that the surface morpholog y is improved. The average root-mean-square (RMS) surface roughness measure d by atomic force microscopy (AFM) decreased from 4.86 nm on the as-grown f ilm to 3.57 nm after a 1000 degreesC annealing. There is no shift but Raman features show an increase in intensity and changes in the full-width at ha lf-maximum (FWHM) observed before and after the annealing. High-resolution X-ray diffraction (HRXRD) is used in two-dimensional (2D) triple axis mappi ng mode to characterize the c-GaN epitaxial films before and after the anne aling process. (C) 2001 Published by Elsevier Science B.V.