Hf. Liu et al., Effect of rapid thermal annealing an the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy, J CRYST GR, 222(3), 2001, pp. 503-506
Rapid thermal annealing (RTA) of the cubic GaN (c-GaN) film grown on GaAs (
0 0 1) substrate by molecular beam epitaxy shows that the surface morpholog
y is improved. The average root-mean-square (RMS) surface roughness measure
d by atomic force microscopy (AFM) decreased from 4.86 nm on the as-grown f
ilm to 3.57 nm after a 1000 degreesC annealing. There is no shift but Raman
features show an increase in intensity and changes in the full-width at ha
lf-maximum (FWHM) observed before and after the annealing. High-resolution
X-ray diffraction (HRXRD) is used in two-dimensional (2D) triple axis mappi
ng mode to characterize the c-GaN epitaxial films before and after the anne
aling process. (C) 2001 Published by Elsevier Science B.V.