Identification of the tetra-interstitial in silicon

Citation
Bj. Coomer et al., Identification of the tetra-interstitial in silicon, J PHYS-COND, 13(1), 2001, pp. L1-L7
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
1
Year of publication
2001
Pages
L1 - L7
Database
ISI
SICI code
0953-8984(20010108)13:1<L1:IOTTIS>2.0.ZU;2-O
Abstract
First-principles computational methods are employed to investigate the stru ctural, vibrational, optical and electronic properties of the self-intersti tial aggregate, I-4 in silicon. We find the defect to be electrically activ e and identify it with the B3 EPR centre. We also show that its properties are consistent with DLTS and optical spectra observed following implantatio n of silicon.