Cadmium sulphide (CdS) thin films have been prepared by using a chemical ba
th deposition (CBD) method. Structural analysis (XRD and TEM) revealed that
the films showed hexagonal structure with lattice constants a=0.4015 nm an
d c=0.6545 nm. On annealing, the films exhibited secondary phase of beta -C
dS (cubic) along with hexagonal phase, but density of dislocations decrease
d. The stacking faults have been observed in the crystalline arrangement by
high resolution transmission electron microscopy (HRTEM). The direct band
gaps of as-grown and annealed films were found to be 2.42 and 2.62 eV with
sub band gap of 2.35 eV, respectively, which were confirmed by optical anal
ysis. On annealing, the resistivity of the films decreased from 3 x 10(6) t
o 1 x 10(3) Omega cm. Multiple Cd and S defects were observed by employing
photoluminescence (PL) method. The intensities of emission peaks for anneal
ed films differed with that of as-grown films. As was discussed with giving
reasons. (C) 2001 Elsevier Science B.V. All rights reserved.