Conductivity in boron-doped diamond - art. no. 033201

The appearance of additional states of an impurity under high doping levels is discussed. On the basis of a Fermi level calculation, a model for the c onductivity of heavily boron-doped diamond is proposed. This model allows o ne to reproduce the temperature dependence of the conductivity and of the H all coefficient for different impurity concentrations. The temperature depe ndence of the conductivity was found to be connected with the coexistence o f valence-hand and hopping conductivities in a wide temperature range. The hopping conductivity takes place over the additional states of the boron im purity.