Signature of an intrinsic point defect in GaNxAs1-x - art. no. 033203

Authors
Thinh, NQ Buyanova, IA Hai, PN Chen, WM Xin, HP Tu, CW
Citation
Nq. Thinh et al., Signature of an intrinsic point defect in GaNxAs1-x - art. no. 033203, PHYS REV B, 6303(3), 2001, pp. 3203
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6303:3<3203:SOAIPD>2.0.ZU;2-T
Abstract
The first experimental signature of an intrinsic defect in GaNAs is provide d from an optically detected magnetic resonance study. The resolved central hyperfine structure identifies the defect with a nuclear spin I =3/2, cont aining either an Asc, antisite or a Ga interstitial. From the strength of t he hyperfine interaction and the growth conditions, a complex involving the As-Ga antisite seems to be a more likely candidate.