Type I band alignment in the GaNxAs1-x/GaAs quantum wells - art. no. 033303

Three independent experimental techniques, namely, time-resolved photolumin escence (PL) spectroscopy, PL polarization, and optically detected cyclotro n resonance, are employed to determine the band alignment of GaNxAs1-x/GaAs quantum structures with a low-N composition. It is concluded that band lin eup is type I based on the following experimental results: (i) comparable r adiative decay time of the GaNAs-related emission measured from single GaNA s epilayers and from GaNAs/GaAs quantum well (QW) structures; (ii) polariza tion of the GaNAs-related emission; and (iii) spatial confinement of the ph otoexcited holes within the GaNAs layers under resonant excitation of the G aNAs QW's.