Model for surfactant-mediated growth of Ge on Pb-covered Si(111) surfaces - art. no. 033304

Authors
Beben, J Hwang, IS Chang, TC Tsong, TT
Citation
J. Beben et al., Model for surfactant-mediated growth of Ge on Pb-covered Si(111) surfaces - art. no. 033304, PHYS REV B, 6303(3), 2001, pp. 3304
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6303:3<3304:MFSGOG>2.0.ZU;2-3
Abstract
A model of surfactant-mediated epitaxy is investigated using the kinetic Mo nte Carlo method. This model assumes that (1) adatom-adatom interaction on the surfactant layer is weakly repulsive far dimers, and (2) a concerted at omic exchange of adatoms with surfactant atoms occurs when adatom clusters above the surfactant layer reach a threshold size. All essential features o bserved in a recent study of Ge/Pb/Si(111) reported by Hwang, Chang and Tso ng can be satisfactorily explained with this model.