Resonant Raman scattering in GaAs induced by an embedded InAs monolayer - art. no. 033306

Authors
Maultzsch, J Reich, S Goni, AR Thomsen, C
Citation
J. Maultzsch et al., Resonant Raman scattering in GaAs induced by an embedded InAs monolayer - art. no. 033306, PHYS REV B, 6303(3), 2001, pp. 3306
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6303:3<3306:RRSIGI>2.0.ZU;2-U
Abstract
We studied the resonant Raman intensity of GaAs optical phonons when the la ser energy is tuned to the optical transition of an InAs monolayer embedded in the bulklike GaAs. The GaAs longitudinal-optical modes interact with he avy and light holes of the InAs via elastic scattering followed by Frohlich interaction. The redshift of the Raman profile compared to photoluminescen ce excitation measurements and the vanishing of the GaAs resonance around 3 0 K are explained by the homogeneous exciton Linewidth in the InAs monolaye r.