Valence-band offset of the lattice-matched beta-FeSi2(100)/Si(001) heterostructure - art. no. 033311

Authors
Al-Allak, HM Clark, SJ
Citation
Hm. Al-allak et Sj. Clark, Valence-band offset of the lattice-matched beta-FeSi2(100)/Si(001) heterostructure - art. no. 033311, PHYS REV B, 6303(3), 2001, pp. 3311
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6303:3<3311:VOOTLB>2.0.ZU;2-O
Abstract
Ab initio pseudopotential calculations have been carried out to determine t he valence-band offset across the interface of FeSi2 grown on a silicon sub strate. The structure of the beta -FeSi2[010]parallel to Si < 110 > matchin g interface is also obtained. The lattice parameters of the beta -FeSi2 epi layer defining the interfacial plane were constrained to those of silicon. The valence-band offset was found to be about 0.39 eV with the Si side of t he interface having the higher potential.