Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots - art. no. 033313

Citation
V. Yam et al., Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots - art. no. 033313, PHYS REV B, 6303(3), 2001, pp. 3313
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6303:3<3313:PSOABS>2.0.ZU;2-W
Abstract
This work presents a study an the effect of a bimodal size distribution and of the pyramid/dome transition to the optical properties of self-assembled Ge/Si quantum dots. The wetting layers are shown to be inhomogeneous in th ickness due to lateral diffusion of Ge from two-dimensional (2D) layers tow ards islands of bimodal sizes, while the island-related photoluminescence r emains unchanged. The results indicate that three-dimensional islands, at t heir early stages of nucleation, are formed by consuming Ge from 2D layers and that the island luminescence energies are more sensitive to Ge/Si inter diffusion than the confinement effect inside the islands as currently belie ved.