A quantitative structural model, based on x-ray diffraction, is provided to
analyze quadruple-period atomic ordering along [110] in a GaAs0.87Sb0.13 a
lloy grown on a (001) GaAs substrate by molecular beam epitaxy. To minimize
the local strain energy derived by a valence force held (VFF) model for th
e alloy, atomic displacements were deduced and incorporated in our model. C
alculation of the scattering pattern based on the model agrees well with ex
periment. We propose that this ordering originates from a (2X4) surface rec
onstruction and the difference in properties of the atomic species.