Small polaron formation in dangling-bond wires on the Si(001) surface - art. no. 035310

Citation
Dr. Bowler et Aj. Fisher, Small polaron formation in dangling-bond wires on the Si(001) surface - art. no. 035310, PHYS REV B, 6303(3), 2001, pp. 5310-NIL_267
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Pages
5310 - NIL_267
Database
ISI
SICI code
0163-1829(20010115)6303:3<5310:SPFIDW>2.0.ZU;2-6
Abstract
From electronic structure calculations, we find that carriers injected into dangling-bond atomic wires on the Si(001) surface will self-trap to form l ocalized polaron states. The self-trapping distortion takes the form of a l ocal suppression of the buckling of the dimers in the wire, and is qualitat ively different for the electron and hole polarons. This result points to t he importance of polaronic effects in understanding electronic motion in su ch nanostructures.