Dr. Bowler et Aj. Fisher, Small polaron formation in dangling-bond wires on the Si(001) surface - art. no. 035310, PHYS REV B, 6303(3), 2001, pp. 5310-NIL_267
From electronic structure calculations, we find that carriers injected into
dangling-bond atomic wires on the Si(001) surface will self-trap to form l
ocalized polaron states. The self-trapping distortion takes the form of a l
ocal suppression of the buckling of the dimers in the wire, and is qualitat
ively different for the electron and hole polarons. This result points to t
he importance of polaronic effects in understanding electronic motion in su
ch nanostructures.