Monte Carlo simulation of polycrystalline thin film deposition - art. no. 035406

Citation
P. Bruschi et al., Monte Carlo simulation of polycrystalline thin film deposition - art. no. 035406, PHYS REV B, 6303(3), 2001, pp. 5406
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6303
Issue
3
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6303:3<5406:MCSOPT>2.0.ZU;2-D
Abstract
A Monte Carlo program for the simulation of the growth of two-dimensional p olycrystalline films onto amorphous substrates is proposed. The coordinate of the atoms are quasicontinuous, allowing islands with different orientati ons to be included in the same sample. Enhanced diffusion along grain bound aries does not need to be modeled ad hoc since, in our model, it is a simpl e geometrical consequence of grain misorientation. Adsorption sites are par tly fixed and partly dynamically generated at run time. The energy barriers are calculated taking into account the environment of the diffusing atoms. Island and grain size distributions estimated over samples obtained with s imulated depositions performed at various substrate temperature are reporte d. The effect of the substrate temperature on the average grain size in fil ms with coverages from 0.2 to 1 have been simulated and compared with the e xperimental data available in the literature.