Compliant substrate technology: Integration of mismatched materials for opto-electronic applications

Citation
K. Vanhollebeke et al., Compliant substrate technology: Integration of mismatched materials for opto-electronic applications, PROG CRYST, 41(1-4), 2000, pp. 1-55
Citations number
133
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
ISSN journal
09608974 → ACNP
Volume
41
Issue
1-4
Year of publication
2000
Pages
1 - 55
Database
ISI
SICI code
0960-8974(2000)41:1-4<1:CSTIOM>2.0.ZU;2-K
Abstract
A critical review of the literature on compliant substrates, together with our own findings, is presented. Fabrication of various compliant substrate types are compared and the difficulties are discussed, with the main focus on the twist-bonded compliant substrates. Wafer bonding, which is the key t echnology to prepare compliant substrates, either directly or using an inte rmediate layer, will be specifically overviewed. Since compliant substrates are generally used for the: growth of device-quality highly mismatched mat erials on dissimilar substrates, the different models extending the critica l thickness are discussed. Our work, which focuses on twist-bonded GaAs com pliant substrates prepared by MOVPE ((Metal Organic Vapor Phase Epitaxy), w ill be presented and the results will be interpreted and compared with the current knowledge on compliant substrates. Finally, preliminary photodetect or and laser diode devices realized on compliant substrates results, will b e presented.