A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPEusing conventional and non gaseous sources

Low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) growth of carbon d oped (InGa)P/GaAs and InP/(InGa)As heterojunction bipolar transistors (HBT) is presented using a non-gaseous source (ngs-) process. Liquid precursors TBAs/TBP for the group-V and DitBuSi/CBr4 for the group-IV dopant sources a re compared to the conventional hydrides AsH3/PH3 and dopant sources Si2H6/ CCl4 while using TMIn/TEGa in both cases. The thermal decomposition of the non gaseous sources fits much better to the need of low temperature growth for the application of carbon doped HBT. The doping behavior using DitBuSi/ CBr4 is studied by van der Pauw Hall measurements and will be compared to t he results using Si2H6/CCl4. Detailed high resolution X-ray diffraction (HR XRD) analysis based on 004 and 002 reflection measurements supported by sim ulations using BEDE RADS simulator enable a non-destructive layer stack cha racterization. InGaP/GaAs HBT structures designed for rf-applications are g rown at a constant growth temperature of T-gr=600 degreesC and at a constan t V/III-ratio of 10 for all GaAs layers. P-type carbon concentrations up to p = 5.10(19)cm(-3) and n-type doping concentrations up to n = 7.10(18)cm(- 3) are achieved. The non self-aligned devices (A(E) = 3.10 mum(2)) show exc ellent performance, like a dc-current gain of B-max = 80, a turn on voltage of V-offset= 110 mV (Breakdown Voltage V-CEBr,V-0 > 10 V), and radio frequ ency properties of f(T)/f(max) = 65 GHz / 59 GHz. In the non-gaseous source configuration the strong reduction in the differe nces of V/III-ratios and temperatures during HBT structure growth enable ea sier LP-MOVPE process control. This is also found for the growth InP/InGaAs HBT where a high de-current gain and high transit frequency of f(T)= 120 G Hz are achieved.