Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure

The influence of hydrostatic pressure on photoluminescence of SiOxNy (x = 0 .25 and y = 1) films grown on the Si substrates and implanted with Ge+ ions , with pressure applied during annealing of the films, was studied for the first time. It is shown that hydrostatic compression leads to a tenfold inc rease in the photoluminescence intensity of the implanted SiOxNy films comp ared to that obtained as a result of postimplantation annealings at atmosph eric pressure. The observed increase in the photoluminescence intensity is attributed to accelerated formation of radiative-recombination centers in t he metastable-phase zones in the implanted silicon oxynitride. These center s are tentatively related to = Si-Si = centers and to complexes involving G e atoms (of =Si-Ge= and =Ge-Ge= types). (C) 2001 MAIK "Nauka/Interperiodica ".