Quasi-local impurity states in uniaxially compressed p-type Ge

Authors
Abramov, AA Tulupenko, VN Firsov, DA
Citation
Aa. Abramov et al., Quasi-local impurity states in uniaxially compressed p-type Ge, SEMICONDUCT, 35(2), 2001, pp. 132-134
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
2
Year of publication
2001
Pages
132 - 134
Database
ISI
SICI code
1063-7826(2001)35:2<132:QISIUC>2.0.ZU;2-6
Abstract
The main characteristics of quasi-local levels produced by shallow-level im purity centers (with a screened Coulomb potential) in uniaxially compressed p-Ge were studied theoretically. Stress dependences of positions and width s of the quasi-local impurity states were calculated. Results of the numeri cal computations for the Ga impurity are presented. (C) 2001 MAIK "Nauka/In terperiodica".