Investigation of the SiC/(SiC)(1-x)(AlN)(x) heterostructures by the methodof capacitance-voltage characteristics

Authors
Kurbanov, MK Bilalov, BA Nurmagomedov, SA Safaraliev, GK
Citation
Mk. Kurbanov et al., Investigation of the SiC/(SiC)(1-x)(AlN)(x) heterostructures by the methodof capacitance-voltage characteristics, SEMICONDUCT, 35(2), 2001, pp. 209-211
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
2
Year of publication
2001
Pages
209 - 211
Database
ISI
SICI code
1063-7826(2001)35:2<209:IOTSHB>2.0.ZU;2-J
Abstract
Using the method of measuring and analyzing the capacitance-voltage charact eristics, it is found that the n-6H-SiC/p-(SiC)(1-x)(AlN)(x) heterostructur es obtained by sublimation epitaxy of the (SiC)(1-x)(AlN)(x) layers on the 6H-SiC substrates have abrupt heterojunctions similar to 10(-4) cm thick. T he basic properties of heterostructures, which depend on the epilayer compo sition and temperature, were determined from the capacitance-voltage charac teristics. (C) 2001 MAIK "Nauka/Interperiodica".