Optical study of InP quantum dots

Results of photoluminescence (PL) studies of self-organized nanoscale InP i slands (quantum dots, QDs) in the In0.49Ga0.51P matrix, grown on a GaAs sub strate by metalorganic vapor phase epitaxy (MOVPE), are presented. Dependen ces of the PL efficiency on temperature in the range 77-300 K and on excita tion level at pumping power densities of 0.01-5 kW/cm(2) have been obtained . The PL spectra are a superposition of emission peaks from QDs and the wet ting layer. Their intensity ratio depends on the pumping power and temperat ure, and the emission wavelength varies in the range 0.65-0.73 mum. At 77 K and low excitation level, InP QDs exhibit high temperature stability of th e emission wavelength and high quantum efficiency. (C) 2001 MAIK "Nauka/Int erperiodica".