The effect of hydrostatic pressure on the electronic and optical properties of InP

Authors
Citation
N. Bouarissa, The effect of hydrostatic pressure on the electronic and optical properties of InP, SOL ST ELEC, 44(12), 2000, pp. 2193-2198
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
12
Year of publication
2000
Pages
2193 - 2198
Database
ISI
SICI code
0038-1101(200012)44:12<2193:TEOHPO>2.0.ZU;2-F
Abstract
Based on the empirical pseudo-potential method, the electronic and optical properties of the InP compound in the zinc-blende structure at ambient and under hydrostatic pressure are reported. The first-order pressure coefficie nts of the main band gaps (at Gamma, X, and L) are given. The agreement bet ween our calculated hydrostatic deformation potential and the available exp erimental data is better than 5%, whereas for the crossover pressure from d irect to indirect band eap is about 10% less. The valence bandwidth increas es with increasing pressure reflecting the decreased ionicity in the materi al of interest. Besides the electronic properties, the effect of pressure o n the dielectric function is also analysed. (C) 2000 Elsevier Science Ltd. All rights reserved.