Citation
K. Suzuki et R. Sudo, Analytical expression for ion-implanted impurity concentration profiles, SOL ST ELEC, 44(12), 2000, pp. 2253-2257
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101
→ ACNP
Volume
44
Issue
12
Year of publication
2000
Pages
2253 - 2257
Database
ISI
SICI code
0038-1101(200012)44:12<2253:AEFIIC>2.0.ZU;2-K
Abstract
By expanding our previously proposed analytical expression for dose-depende
nt ion-implanted impurity concentration profiles using a main function and
a tail function, we improve the model so that the parameters can be extract
ed more robustly and extend the model to accommodate double-peak profiles.
The shape of our new profile model can be imaged more dearly from a set of
parameters. (C) 2000 Elsevier Science Ltd. All rights reserved.