Using high resolution low-energy electron diffraction for spot profile anal
ysis we have investigated dense phases (close to one monolayer) of Pb on Si
(1 1 1)7 x 7 substrates within the temperature range of 25-600 degreesC. Th
e observed diffraction pattern from these superstructures can be explained
by models basing on root3 x root3 overlayers with almost perfectly ordered
domain walls. Using the kinematical approximation we obtain very good agree
ment between experiments and model calculations (considering both the posit
ion and the diffraction spot intensities). In this paper both structures, t
he Si(1 1 1)-root 31 x root3-Pb superstructure and Si(1 1 1)-13 x \/5-Pb su
perstructure are revealed as commensurate with root3 unit cells and regular
ly arranged domain walls. In matrix form these phases should be designated
as Si(1 1 1)-((6)(-1) (5)(1))-Pb and Si(1 1 1)-((13)(-1) (13)(1))-Pb phase.
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