Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters

The well-known model of current-voltage (I-V) characteristics of a MOS tran sistor (MOST) in weak inversion [1] was modified with regard to lateral non uniformity of the semiconductor surface potential. A simple technique for d etermining the fluctuation parameter and the spectral density of interface states from drain-current (output) and drain-gate (transfer) single-thresho ld I-V characteristics is developed. Combined with measurements of the MOST threshold voltage, it makes possible the calculation of the effective oxid e charge. The technique is fairly accurate and is useful for IC process con trol. (C) 2001 MAIK "Nauka/Interperiodica".