Laser-induced implantation and diffusion of magnesium into silicon

Authors
Arutyunyan, VM Akhoyan, AP Adamyan, ZN Barsegyan, RS
Citation
Vm. Arutyunyan et al., Laser-induced implantation and diffusion of magnesium into silicon, TECH PHYS, 46(2), 2001, pp. 198-201
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
46
Issue
2
Year of publication
2001
Pages
198 - 201
Database
ISI
SICI code
1063-7842(2001)46:2<198:LIADOM>2.0.ZU;2-R
Abstract
Laser-induced diffusion ("implantation") of magnesium atoms into silicon wa s studied experimentally. Neodymium-glass laser irradiation (lambda = 1.06 mum, tau similar to 0.4 ms) was found to increase the diffusion coefficient and solubility of magnesium in silicon. Current-voltage and capacity-volta ge characteristics, as well as thermostimulated current spectra of [Si + Mg ] crystals, were obtained. (C) 2001 MAIK "Nauka/Interperiodica".