Influence of long time nucleation on homogeneity of diamond films grown onsilicon substrates

Citation
A. Kromka et al., Influence of long time nucleation on homogeneity of diamond films grown onsilicon substrates, ACT PHYS SL, 51(1), 2001, pp. 27-34
Citations number
11
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SLOVACA
ISSN journal
03230465 → ACNP
Volume
51
Issue
1
Year of publication
2001
Pages
27 - 34
Database
ISI
SICI code
0323-0465(200102)51:1<27:IOLTNO>2.0.ZU;2-P
Abstract
The nature of the nucleation centers formed during the so-called bias enhan cement nucleation (BEN) of chemical vapor deposited diamond is still an ope n question. We address this problem by studying a long time nucleation proc ess and its impact upon the nucleation density and quality of grown films d eposited on Si substrates by hot filament chemical vapor deposition (HF CVD ) method. It was found that the nucleation density of the growth centers on silicon wafers increased drastically with the increasing process time up t o a few hours.