In situ ATR-FT-IR kinetic studies of molecular transport and surface binding in thin sol-gel films: Reactions of chlorosilane reagents in porous silica materials
D. Rivera et Jm. Harris, In situ ATR-FT-IR kinetic studies of molecular transport and surface binding in thin sol-gel films: Reactions of chlorosilane reagents in porous silica materials, ANALYT CHEM, 73(3), 2001, pp. 411-423
ATR-FT-IR spectroscopy was employed to study the kinetics of transport and
binding within thin silica sol-gel films. Studies of transport of several n
onbinding probe molecules n-heptane, toluene, and 2-propanol, showed that s
low diffusion occurs within the micropores of the sol-gel films which could
be modeled as a single-exponential accumulation in agreement with numerica
l models for diffusion in constricted pores. The rate of transport into the
film was found to decrease for molecules that interact strongly with the s
ilica surface, which is consistent with adsorption inhibiting the transport
of molecules through the pores. In situ spectroscopic studies of surface r
eactions with diphenylchlorosilane (DP-SICl) reveal that DPSiCl reacts quic
kly with surface water to form diphenylhydroxysilane (DPSiOH), the reactive
species detected within the film. Analysis of the time-dependent infrared
spectra reveals both transport and surface-binding steps in the reaction ki
netics. From the magnitudes of the rate constants and the corresponding pur
e component spectra, it is determined that the surface- binding component i
s responsible for accumulation of most of the silane at the silica surface.
Ex situ spectro scopic studies confirm that Si-O-Si bond formation occurs
at room temperature in these sol-gel films. Studies of chlorosilane reactio
ns at silica surfaces pretreated with Methylamine were conducted to investi
gate the influence of amines on this chemistry; it was determined that the
amine enhances the transport of more reagent molecules to the silica surfac
e while the intrinsic rate of the binding reaction is not significantly cha
nged.