Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells

Authors
Huang, YC Liang, JC Sun, CK Abare, A DenBaars, SP
Citation
Yc. Huang et al., Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells, APPL PHYS L, 78(7), 2001, pp. 928-930
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
7
Year of publication
2001
Pages
928 - 930
Database
ISI
SICI code
0003-6951(20010212)78:7<928:PLADCI>2.0.ZU;2-T
Abstract
Lateral diffusion behavior of two-dimensional carrier gas in InGaN/GaN mult iple quantum wells was investigated using optical transient transmission me asurements. A large ambipolar diffusion coefficient was observed, which was attributed to the enhancement by a strong piezoelectric field. This large ambipolar diffusion coefficient was found to increase with increased well w idth with a value on the order of 3000 cm(2)/s for a 62 Angstrom well-width sample. (C) 2001 American Institute of Physics.