Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs

Authors
Zangooie, S Schubert, M Thompson, DW Woollam, JA
Citation
S. Zangooie et al., Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs, APPL PHYS L, 78(7), 2001, pp. 937-939
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
7
Year of publication
2001
Pages
937 - 939
Database
ISI
SICI code
0003-6951(20010212)78:7<937:IROMFP>2.0.ZU;2-P
Abstract
Spectroscopic ellipsometry is used to measure the dielectric function of he avily doped p-type GaAs for wave numbers from 100 to 2000 cm(-1). Due to pa rtial filling of the heavy- and light-hole valence bands, heavy holes as we ll as light holes form a multiple-component plasma coupled with longitudina l optical phonons. Line-shape analysis of the infrared response allows diff erentiating between light- and heavy-hole contributions to the carrier plas ma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs. (C) 2001 American Institute of Physic s.