Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

In this letter, a physically based model describing the kinetic evolution o f extrinsic defects during annealing is presented. The fundamental concepts of Ostwald ripening and formation energy of extrinsic defects are combined in this model, which has been tested against some classical experiments co ncerning (i) transient enhanced diffusion (TED) of dopants in conjunction w ith the dissolution of {113} defects and (ii) the "pulsed" TED observed in the case of ultralow energy implants where the surface acts as a strong sin k for the silicon interstitial atoms. We show that a full understanding of the formation and the evolution of extended defects leads to a correct pred iction of dopant enhanced diffusion in all experimental conditions. (C) 200 1 American Institute of Physics.