High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films

Authors
Zhu, XH Li, AD Wu, D Zhu, T Liu, ZG Ming, NB
Citation
Xh. Zhu et al., High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films, APPL PHYS L, 78(7), 2001, pp. 973-975
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
7
Year of publication
2001
Pages
973 - 975
Database
ISI
SICI code
0003-6951(20010212)78:7<973:HEMIOS>2.0.ZU;2-G
Abstract
Structural planar defects in the SrBi2Ta2O9 (SBT) films with 10 mol % exces s Bi grown in Pt/TiO2/SiO2/Si substrates by metalorganic deposition have be en observed by high-resolution electron microscopy. It was found that these stacking defects were planar defects with extra Bi-O planes normal to the c axis. These structural defects are expected to effectively improve the fe rroelectric response and fatigue-resistance characteristics of SBT films be cause of the extra Bi-O planes having higher strucutral flexibility and all eviating the mechanical stresses and strains as well as injected-charge pro blems. (C) 2001 American Institute of Physics.