Magnetic-field measurements of current-carrying devices by force-sensitivemagnetic-force microscopy with potential correction

Citation
T. Alvarez et al., Magnetic-field measurements of current-carrying devices by force-sensitivemagnetic-force microscopy with potential correction, APPL PHYS L, 78(7), 2001, pp. 1005-1007
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
7
Year of publication
2001
Pages
1005 - 1007
Database
ISI
SICI code
0003-6951(20010212)78:7<1005:MMOCDB>2.0.ZU;2-A
Abstract
A scanning probe technique for current-carrying device imaging is proposed that combines magnetic-force microscopy with surface-potential nulling meas urements. The device is ac biased at an off-resonant frequency and the curr ent-induced magnetic field results in cantilever deflection which is detect ed by a lock-in amplifier. An ac bias at the resonant frequency is simultan eously applied to the tip and conventional scanning surface-potential micro scopy feedback is used to match the tip and surface potentials. This multip le-modulation technique allows electrostatic and magnetic interactions to b e distinguished and surface-potential and magnetic-force images to be colle cted simultaneously. The technique, which is referred to as potential-corre ction magnetic-force microscopy, produces force rather than force-gradient images as in conventional magnetic-force microscopy. Further prospects for potential-sensitive magnetic-force imaging are discussed. (C) 2001 American Institute of Physics.