T. Alvarez et al., Magnetic-field measurements of current-carrying devices by force-sensitivemagnetic-force microscopy with potential correction, APPL PHYS L, 78(7), 2001, pp. 1005-1007
A scanning probe technique for current-carrying device imaging is proposed
that combines magnetic-force microscopy with surface-potential nulling meas
urements. The device is ac biased at an off-resonant frequency and the curr
ent-induced magnetic field results in cantilever deflection which is detect
ed by a lock-in amplifier. An ac bias at the resonant frequency is simultan
eously applied to the tip and conventional scanning surface-potential micro
scopy feedback is used to match the tip and surface potentials. This multip
le-modulation technique allows electrostatic and magnetic interactions to b
e distinguished and surface-potential and magnetic-force images to be colle
cted simultaneously. The technique, which is referred to as potential-corre
ction magnetic-force microscopy, produces force rather than force-gradient
images as in conventional magnetic-force microscopy. Further prospects for
potential-sensitive magnetic-force imaging are discussed. (C) 2001 American
Institute of Physics.