J. Aarik et al., Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, APPL SURF S, 172(1-2), 2001, pp. 148-158
Atomic layer deposition (ALD) of titanium dioxide from TiCl4 and H2O was st
udied at substrate temperatures of 100-400 degreesC. Using a real-time quar
tz crystal microbalance method, it was demonstrated that although the surfa
ce reactions were self-limited, the growth rate depended on the temperature
and development of the thin film structure. Relatively low growth rate whi
ch was obtained in the TiCl4/H2O ALD process, was found to be a result of a
significant chlorine amount adsorbed during the TiCl4 pulse. Surface inter
mediates formed in the initial stage of TiCl4 adsorption were unstable and
weakly bonded to the surface. Desorption and decomposition of these species
additionally influenced the deposition late and, especially, its dependenc
e on the precursor pulse times. (C) 2001 Elsevier Science B.V. All rights r
eserved.