Dielectric behaviour of valence compensated system Ba1-xLaxSn1-xNixO3

Compositions in the system Ba1-xLaxSn1-xNixO3 up to x less than or equal to 0.30 were prepared by solid state sintering, and the dielectric behaviour of single phase solid solutions studied. It has been found that solid solut ions form for compositions with x less than or equal to 0.15, the structure remaining cubic, similar to BaSnO3. The grain size of all the sintered com positions was almost the same as that for BaSnO3, i.e. 2-3 mum. Dielectric relaxation in these materials is explained on the basis of the reorientatio n of dipoles due to hopping of electrons among Ni2+ and Ni3+ ions.