Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantumwell laser structure

Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser struct ure by the impurity-free vacancy diffusion (IFVD) is investigated using pho toluminescence. It has been demonstrated that the effects of the plasma bom bardment to the:sample surface involved in the IFVD technique can enhance t he intermixing of the InGaAsP/InP MQW laser structure. The reliability of t he IFVD technique, particularly the effects of the surface decomposition an d the intrinsic defects formed in the growth or preparation of the wafer, h as been discussed.