A new silicon-based ferroelectric sandwich structure

Authors
Ren, TL Zhang, LT Liu, LT Li, ZJ
Citation
Tl. Ren et al., A new silicon-based ferroelectric sandwich structure, CHIN PHYS L, 18(1), 2001, pp. 132-133
Citations number
6
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
18
Issue
1
Year of publication
2001
Pages
132 - 133
Database
ISI
SICI code
0256-307X(2001)18:1<132:ANSFSS>2.0.ZU;2-D
Abstract
A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O-3/PbTiO3 sandwich structure is fabricated by a sol-gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100 degrees C. Capacitance-voltage, polarization-electric hel d and dielectric-fiequency properties of this sandwich structure are studie d. The Pb(ZrxTi1-x)O-3 films are proved to have good dielectric and ferroel ectric properties.