Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure

Authors
Fehse, R Sweeney, SJ Adams, AR O'Reilly, EP Egorov, AY Riechert, H Illek, S
Citation
R. Fehse et al., Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure, ELECTR LETT, 37(2), 2001, pp. 92-93
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
2
Year of publication
2001
Pages
92 - 93
Database
ISI
SICI code
0013-5194(20010118)37:2<92:IICRPI>2.0.ZU;2-2
Abstract
The threshold current of 1.3 mum GaInNAs lasers increases by similar to 30% up to a pressure of 1GPa compared with a decrease of similar to 15% for Au ger-dominated InGaAsP devices. indicating that direct band-to-band Auger re combination is not important in these materials. The lasing energy varies s ub-linearly with pressure, indicative of the increasing interaction of the N-level with the conduction band.