Low level and reflection phase noise measurements on a FET

Authors
Llopis, O Juraver, JB Cibiel, G Graffeuil, J
Citation
O. Llopis et al., Low level and reflection phase noise measurements on a FET, ELECTR LETT, 37(2), 2001, pp. 127-129
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
2
Year of publication
2001
Pages
127 - 129
Database
ISI
SICI code
0013-5194(20010118)37:2<127:LLARPN>2.0.ZU;2-7
Abstract
The residual phase noise of a PHEMT device is studied in two unusual config urations: in transmission mode with a low input microwave power on the devi ce, and in reflection mode. Measurements dearly reveal some fundamental asp ects of the phase noise generation in this device: the phase noise is a mod ulation mechanism which still exists in the linear regime and in which the gate reactance fluctuations play an important role.