Multi-excitons in self-assembled InAs/GaAs quantum dots: A pseudopotential, many-body approach

We use a many-body, atomistic empirical pseudopotential approach to predict the multi-exciton emission spectrum of a lens-shaped InAs/GaAs self-assemb led quantum dot. We discuss the effects of i) the direct Coulomb energies, including the differences of electron and hole wave functions; ii) the exch ange Coulomb energies and iii) correlation energies given by a configuratio n interaction calculation. Emission from the ground state of the N exciton system to the N - 1 exciton system involving e(0) --> h(0) and e(1) --> h(1 ) recombinations are discussed. A comparison with a simpler single-band, ef fective mass approach is presented.