Electrical conductivity of low-temperature-deposited Al0.1Ga0.9N interlayer

We have realized a conductive AlGaN interlayer which was deposited at low t emperatures ranging from 500 to 600 degreesC. We studied the surface morpho logy and electrical property of an AlGaN/low-temperature-deposited (LT) AlG aN interlayer/GaN structure, dependent on the growth condition. It was foun d that the conductive LT-AlGaN interlayer and crack-free overgrown Al0.1Ga0 .9N layer with a thickness of 1 mum were obtained with intermediate deposit ion temperature and SiH4 supply for the interlayer. Using the conductive LT -AlGaN interlayer technology, we demonstrated the low-voltage operation of a light emitting diode. The conductive LT-AlGaN interlayer is promising tec hnology for the realization of shorter wavelength emitters with high AlN mo lar fraction AlGaN cladding layers.