Structural transformation of screw dislocations via thick 4H-SiC epitaxialgrowth

In this paper? we studied the structural transformation of screw dislocatio ns through gas-phase 4H-SiC epitaxial growth. We confirmed based on the num bers and features of etch pits on a surface after KOH treatment that some m icropipes were closed in the epitaxial layer, and were divided into several elementary screw dislocations. We discuss the magnitude of Burgers vectors of micropipes in 4H-SiC substrates in relation to the number of elementary screw dislocations generated by micropipe closing. A depth analysis furthe r revealed that most micropipe closings tool; place in the initial stage of epitaxial growth.